2SC1674 transistor (npn) feature power dissipation p cm : 0. 25 w (tamb=25 ) collector current i cm : 0.02 a collector-base voltage v (br)cbo : 30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic= 100 a , i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 4 v collector cut-off current i cbo v cb = 30v, i e =0 0.1 a emitter cut-off current i ebo v eb =3v , i c =0 0.1 a dc current gain h fe v ce =6 v, i c = 1ma 40 180 collector-emitter saturation voltage v ce(sat) i c =10 ma, i b = 1 ma 0.3 v base-emitter voltage v be (on) v ce =6 v, i c = 1ma 0.72 v transition frequency f t v ce =6 v, i c = 1ma 400 mhz collector output capacitance c ob v ce =6v, i e =0, f=1mhz 1.5 pf noise figure nf v ce =6v, i c =1ma, f=100mhz, r s =50 ? 5 db power gain g p v ce =6v,i c =1ma,f=100mhz 18 db classification of h fe(1) rank y gr bl range 40-80 60-120 90-180 1 2 3 to-92 1. emitter 2. collector 3. base . 2SC1674 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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